ChemicalFormula: H3PO4
CAS: 7664-38-2
Application: mainlyused as cleaning agent and etching agent for semiconductor separation devices,widely used in large-scale integrated circuits. 1. Cleaning beforegluing the substrate; 2. Etching and final degumming during photolithography; 3, Cleaning during thesilicon wafer process, and insulating film etching, semiconductor film etching,conductor film etching, organic material etching, etc..
Packing:20L/200L/1000Lcleaning drum, ISO TANK
ITEM | Spec | ||
E1 | E2 | E3/E4 | |
Appearance | Clear,colourless, viscous liquid | ||
H3PO4 85%（%） | 85～87 | 85～87 | 85～87 |
H3PO3 % | ≤0.005 | ≤0.001 | ≤0.001 |
NO3- ppm | ≤5 | ≤0.5 | ≤0.5 |
SO42-ppm | ≤10 | ≤5 | ≤5 |
Cl- ppm | ≤1 | ≤0.5 | ≤0.2 |
Al ppb | ≤200 | ≤50 | — |
B ppb | ≤50 | — | |
Sb ppb | ≤3000 | ≤300 | — |
As ppb | ≤100 | ≤20 | — |
Ba ppb | ≤100 | ≤20 | — |
Cd ppb | ≤100 | ≤20 | — |
Ca ppb | ≤1000 | ≤50 | — |
Cr ppb | ≤100 | ≤20 | — |
Co ppb | 100 | 20 | — |
Cu ppb | ≤50 | ≤20 | — |
Ga ppb | ≤100 | ≤10 | — |
Au ppb | ≤100 | ≤10 | — |
Fe ppb | ≤300 | ≤50 | — |
Pb ppb | ≤100 | ≤20 | — |
Li ppb | ≤100 | ≤10 | — |
Mg ppb | ≤100 | ≤20 | — |
Mn ppb | ≤100 | ≤20 | — |
Ni ppb | ≤100 | ≤20 | — |
K ppb | ≤100 | ≤20 | — |
Ag ppb | ≤100 | ≤20 | — |
Na ppb ≤ | ≤500 | ≤50 | — |
Sn ppb ≤ | ≤— | ≤10 | — |
Sr ppb ≤ | ≤100 | ≤20 | — |
Ti ppb ≤ | ≤100 | ≤50 | — |
Zn ppb ≤ | ≤100 | ≤50 | — |
particle（μm，pcs/mL） | As per buyer’s request | ||